Growth and optical properties of InxAlyGa1-x-yN quaternary alloys
Identifieur interne : 010572 ( Main/Repository ); précédent : 010571; suivant : 010573Growth and optical properties of InxAlyGa1-x-yN quaternary alloys
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Abstract
InxAlyGa1-xN quaternary alloys with different In and Al compositions were grown by metalorganic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. It was observed that the dominant optical transition at low temperatures in InxAlyGa1-xN quaternary alloys was due to localized exciton recombination, while the localization effects in InxAlyGa1-xN quaternary alloys were combined from those of InGaN and AlGaN ternary alloys with comparable In and Al compositions. Our studies have revealed that InxAlyGa1-xN quaternary alloys with lattice matched with GaN epilayers (y≃4.8x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensity (or quantum efficiency) in InxAlyGa1-x-yN quaternary alloys than that of GaN. The quantum efficiency of InxAlyGa1-xN quaternary alloys was also enhanced significantly over AlGaN alloys with a comparable Al content. These results strongly suggested that InxAlyGa1-x-yN quaternary alloys open an avenue for the fabrication of many optoelectronic devices such as high efficient light emitters and detectors, particularly in the ultraviolet region. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth and optical properties of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloys</title><author><name sortKey="Li, J" uniqKey="Li J">J. Li</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Nam, K B" uniqKey="Nam K">K. B. Nam</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Kim, K H" uniqKey="Kim K">K. H. Kim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0019487</idno><date when="2001-01-01">2001-01-01</date><idno type="stanalyst">PASCAL 01-0019487 AIP</idno><idno type="RBID">Pascal:01-0019487</idno><idno type="wicri:Area/Main/Corpus">011F63</idno><idno type="wicri:Area/Main/Repository">010572</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Line intensity</term><term>MOCVD</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Time resolved spectra</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7855C</term><term>8105E</term><term>8115G</term><term>7847</term><term>7135G</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Méthode MOCVD</term><term>Spectre résolution temporelle</term><term>Photoluminescence</term><term>Exciton</term><term>Intensité raie</term><term>Couche épitaxique semiconductrice</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x</sub>N quaternary alloys with different In and Al compositions were grown by metalorganic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. It was observed that the dominant optical transition at low temperatures in In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x</sub>N quaternary alloys was due to localized exciton recombination, while the localization effects in In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x</sub>N quaternary alloys were combined from those of InGaN and AlGaN ternary alloys with comparable In and Al compositions. Our studies have revealed that In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x</sub>N quaternary alloys with lattice matched with GaN epilayers (y≃4.8x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensity (or quantum efficiency) in In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloys than that of GaN. The quantum efficiency of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x</sub>N quaternary alloys was also enhanced significantly over AlGaN alloys with a comparable Al content. These results strongly suggested that In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloys open an avenue for the fabrication of many optoelectronic devices such as high efficient light emitters and detectors, particularly in the ultraviolet region. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Growth and optical properties of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloys</s1></fA08><fA11 i1="01" i2="1"><s1>LI (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>NAM (K. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>KIM (K. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>61-63</s1></fA20><fA21><s1>2001-01-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0019487</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x</sub>N quaternary alloys with different In and Al compositions were grown by metalorganic chemical vapor deposition. 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The quantum efficiency of In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x</sub>N quaternary alloys was also enhanced significantly over AlGaN alloys with a comparable Al content. These results strongly suggested that In<sub>x</sub>Al<sub>y</sub>Ga<sub>1-x-y</sub>N quaternary alloys open an avenue for the fabrication of many optoelectronic devices such as high efficient light emitters and detectors, particularly in the ultraviolet region. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="05" i2="3"><s0>001B70H47</s0></fC02><fC02 i1="06" i2="3"><s0>001B70A35</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7135G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Méthode MOCVD</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>MOCVD</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Exciton</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Excitons</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Intensité raie</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Line intensity</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fN21><s1>008</s1></fN21><fN47 i1="01" i2="1"><s0>0101M000609</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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